25 September 2012 Multilayer photonic logic gate integrated into microelectronic chip
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An all-optical XOR gate was designed to take advantage of the previously unused silicon dioxide (SiO2) interconnect layers in a microelectronic chip. The device relies on the coupling of modes between parallel waveguides and the interaction of the modes with the metal interconnects of a silicon chip to obtain a phase difference between input arms. When the signals from the two input arms interfere, the result is a logic XOR operation due to the phase difference. The design was numerically implemented, and a contrast of 18.7 dB was obtained with a 13.2-μm-long logic gate.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE)
Amihai Meiri, Amihai Meiri, Shai Tzur, Shai Tzur, Yosi Cohen, Yosi Cohen, Ori Bass, Ori Bass, Alexander Fish, Alexander Fish, Zeev Zalevsky, Zeev Zalevsky, } "Multilayer photonic logic gate integrated into microelectronic chip," Journal of Nanophotonics 6(1), 061607 (25 September 2012). https://doi.org/10.1117/1.JNP.6.061607 . Submission:

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