26 April 2012 Al-doped ZnO aligned nanorod arrays: significant implications for optic and opto-electronic applications
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Abstract
We investigated the optical and optoelectronic properties of vertically aligned Al:ZnO nanorod arrays synthesized by the hydrothermal technique at a considerably low temperature on a sputtered Al:ZnO seed layer. The nanorod arrays maintained remarkable alignment along the c-axis over a large area. The seed layers and nanorod arrays showed various optical band gaps. Investigation of the optoelectronic properties of nanorod arrays on Al:ZnO/p-Si seed layer with SiO2 revealed that the photocurrent is significantly reduced in nanorod arrays on a AZO/SiO2/p-Si heterojunction due to multiple scattering phenomena associated with nanorod arrays. This research may open up venues for various optical and opto-electronic applications where highly aligned nanostructures are desired.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE)
Terence Holloway, Rajeh Mundle, Hareesh Dondapati, Messaoud J. Bahoura, Aswini K. Pradhan, "Al-doped ZnO aligned nanorod arrays: significant implications for optic and opto-electronic applications," Journal of Nanophotonics 6(1), 063507 (26 April 2012). https://doi.org/10.1117/1.JNP.6.063507 . Submission:
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