21 May 2012 Photoluminescence of Er-doped ZnO nanoparticle films via direct and indirect excitation
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Photoluminescence (PL) of Er-doped ZnO nanoparticle films was studied. The films were grown on silicon (100) or fused silica substrates using e-beam evaporation and subsequently annealed at 700 °C in air for an hour. PL was measured at two excitation wavelengths, 325 and 514.5 nm. The 325 nm was used for exciting the host semiconductor ZnO while 514.5 nm was used for directly exciting Er3+ ions in the ZnO host. Er3+ luminescence was observed from annealed films using either indirect (325 nm) or direct (514.5 nm) excitations. It has been found that the indirect excitation is significantly more efficient than the direct excitation in producing 1.54 μm photoluminescence. With indirect excitation, the Er3+ luminescence observed is attributed to energy transfer from ZnO host to the Er3+ ions doped. Energy transfer from e-h pairs resulting from ZnO host excitation may provide efficient routes for exciting Er3+ ions inside nano-crystalline particles of the films.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE)
Zhengda Pan, Zhengda Pan, Akira Ueda, Akira Ueda, Steven H. Morgan, Steven H. Morgan, Richard Mu, Richard Mu, Haiyang Xu, Haiyang Xu, Sui K. Hark, Sui K. Hark, } "Photoluminescence of Er-doped ZnO nanoparticle films via direct and indirect excitation," Journal of Nanophotonics 6(1), 063508 (21 May 2012). https://doi.org/10.1117/1.JNP.6.063508 . Submission:

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