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2 July 2012 Performance enhancement of deep violet indium gallium nitride double quantum well lasers using delta barrier close to electron blocking layer
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Abstract
A thin aluminum gallium nitride (AlGaN) electron blocking layer (EBL), above the active region, is used to improve the performance and reduce threshold current of indium gallium nitride (InGaN) quantum well (QW) lasers. A new structure, with delta barrier close to EBL (AlGaN/0.3  nm GaN/InGaN), was devised to prevent deleterious polarization effects and confer other advantages. The effect of a 0.3 nm-thick GaN delta barrier on the performance of a deep violet InGaN double QW laser was investigated using ISE TCAD software. The results indicate that the delta barrier significantly enhances the output power, slope efficiency and external differential quantum efficiency while decreasing the threshold current.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2012/$25.00 © 2012 SPIE
Ghasem Alahyarizadeh, Zainuriah Hassan, Alaa J. Ghazai, Hadi Mahmodi, and Sabah M. Thahab "Performance enhancement of deep violet indium gallium nitride double quantum well lasers using delta barrier close to electron blocking layer," Journal of Nanophotonics 6(1), 063514 (2 July 2012). https://doi.org/10.1117/1.JNP.6.063514
Published: 2 July 2012
JOURNAL ARTICLE
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