16 October 2012 Lateral variation of interface disorder in wetting layer on formation of InAs/InP quantum dots visualized by near-field imaging spectroscopy
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Abstract
Near-field photoluminescence imaging spectroscopy of a wetting layer of InAs/InP quantum dots (QDs) at the critical thickness of 2.4 monolayers (ML) is used to visualize the spatial variation of the interface disorder. The wetting layer has a significantly lower density of carrier localization centers than a 2-ML thick InAs/InP quantum well, particularly in the vicinity of the QDs. This indicates that atomic-scale interface disorder is reduced during the initial stages of QD formation; in contrast, disorder remained far from the QDs.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE)
Hiroki Tojinbara, Motoki Takahashi, Nobuhiro Tsumori, Dai Mizuno, Ryosuke Kubota, Toshiharu Saiki, Yoshiki Sakuma, "Lateral variation of interface disorder in wetting layer on formation of InAs/InP quantum dots visualized by near-field imaging spectroscopy," Journal of Nanophotonics 6(1), 063521 (16 October 2012). https://doi.org/10.1117/1.JNP.6.063521 . Submission:
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