16 October 2012 Lateral variation of interface disorder in wetting layer on formation of InAs/InP quantum dots visualized by near-field imaging spectroscopy
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Abstract
Near-field photoluminescence imaging spectroscopy of a wetting layer of InAs/InP quantum dots (QDs) at the critical thickness of 2.4 monolayers (ML) is used to visualize the spatial variation of the interface disorder. The wetting layer has a significantly lower density of carrier localization centers than a 2-ML thick InAs/InP quantum well, particularly in the vicinity of the QDs. This indicates that atomic-scale interface disorder is reduced during the initial stages of QD formation; in contrast, disorder remained far from the QDs.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE)
Hiroki Tojinbara, Hiroki Tojinbara, Motoki Takahashi, Motoki Takahashi, Nobuhiro Tsumori, Nobuhiro Tsumori, Dai Mizuno, Dai Mizuno, Ryosuke Kubota, Ryosuke Kubota, Toshiharu Saiki, Toshiharu Saiki, Yoshiki Sakuma, Yoshiki Sakuma, } "Lateral variation of interface disorder in wetting layer on formation of InAs/InP quantum dots visualized by near-field imaging spectroscopy," Journal of Nanophotonics 6(1), 063521 (16 October 2012). https://doi.org/10.1117/1.JNP.6.063521 . Submission:
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