18 July 2013 Refractive index of laser active region based on InAs/InGaAs quantum dots
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J. of Nanophotonics, 7(1), 073087 (2013). doi:10.1117/1.JNP.7.073087
The effective refractive index of the active region of 1.3 μm edge-emitting tilted wave lasers based on InAs/InGaAs self-assembled quantum dots by the analysis of the far-field pattern is investigated. The obtained values of 3.485 and 3.487 in the operating lasers and in the cold waveguides, respectively, are well comparable with the refractive index of bulk InAs at corresponding wavelength.
© 2013 Society of Photo-Optical Instrumentation Engineers (SPIE)
Nikita Yu Gordeev, Oleg I. Rumyantsev, Ivan G. Savenko, Alexey S. Payusov, Fedor I. Zubov, Mikhail V. Maximov, Alexey E. Zhukov, "Refractive index of laser active region based on InAs/InGaAs quantum dots," Journal of Nanophotonics 7(1), 073087 (18 July 2013). https://doi.org/10.1117/1.JNP.7.073087


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