10 January 2013 Photon absorption coefficient (α) for a low-dimensional CdS/CdTe absorber by a partial k-selection approach
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Abstract
The dependence of photon absorption by a low-dimensional cadmium-sulfide/cadmium-telluride (CdS/CdTe) heterostructured absorber on the thickness and number of CdTe active layers is investigated. The equation for the photon absorption coefficient (α) used is based on the partial momentum k-selection approach. Theoretical results show that absorption greater than 4×104  cm−1 is obtained when the thickness of the active layer reaches 50 Å. Similarly, with each additional CdTe active layer in the heterostructured absorber, a relative increase of 0.5×104  cm−1 in photon absorption is achieved. The relation between photoelectric quantum efficiency and photon absorption is determined by the number and thickness of the CdTe active layers in the heterostructured absorber. A quantum efficiency greater than 0.9 is obtained using 15 active layers with a thickness of 50 Å.
© 2013 Society of Photo-Optical Instrumentation Engineers (SPIE)
Jose R. Villa-Angulo, Rafael Villa-Angulo, Carlos E. Villa-Angulo, "Photon absorption coefficient (α) for a low-dimensional CdS/CdTe absorber by a partial k-selection approach," Journal of Nanophotonics 7(1), 073099 (10 January 2013). https://doi.org/10.1117/1.JNP.7.073099 . Submission:
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