27 February 2014 Silicon carbide multilayer protective coating on carbon obtained by thermionic vacuum arc method
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Thermionic vacuum arc (TVA) method is currently developing, in particular, to work easily with heavy fusible material for the advantage presented by control of directing energy for the elements forming a plasma. The category of heavy fusible material can recall C and W (high-melting point materials), and are difficult to obtain or to control by other means. Carbon is now used in many areas of special mechanical, thermal, and electrical properties. We refer in particular to high-temperature applications where unwanted effects may occur due to oxidation. Changed properties may lead to improper functioning of the item or device. For example, increasing the coefficient of friction may induce additional heat on moving items. One solution is to protect the item in question by coating with proper materials. Silicon carbide (SiC) was chosen mainly due to compatibility with coated carbon substrate. Recently, SiC has been used as conductive transparent window for optical devices, particularly in thin film solar cells. Using the TVA method, SiC coatings were obtained as thin films (multilayer structures), finishing with a thermal treatment up to 1000°C. Structural properties and oxidation behavior of the multilayer films were investigated, and the measurements showed that the third layer acts as a stopping layer for oxygen. Also, the friction coefficient of the protected films is lower relative to unprotected carbon films.
© 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)
Victor Ciupina, Victor Ciupina, Christian P. Lungu, Christian P. Lungu, Rodica Vladoiu, Rodica Vladoiu, Gabriel Prodan, Gabriel Prodan, Corneliu Porosnicu, Corneliu Porosnicu, Marius Belc, Marius Belc, Iuliana M. Stanescu, Iuliana M. Stanescu, Eugeniu Vasile, Eugeniu Vasile, Razvan Rughinis, Razvan Rughinis, } "Silicon carbide multilayer protective coating on carbon obtained by thermionic vacuum arc method," Journal of Nanophotonics 8(1), 083996 (27 February 2014). https://doi.org/10.1117/1.JNP.8.083996 . Submission:

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