Intraband optical transition energy in type-I group II to VI spherical quantum dots

Christina L. J. Paul; John Peter Amalorpavam; Chang Woo Lee

doi:10.1117/1.JNP.9.093069

23 June 2015 Intraband optical transition energy in type-I group II to VI spherical quantum dots

Christina L. J. Paul, John Peter Amalorpavam, Chang Woo Lee

Author Affiliations +

Journal of Nanophotonics, Vol. 9, Issue 1, 093069 (June 2015). https://doi.org/10.1117/1.JNP.9.093069

Abstract

Electronic properties and intersub-band optical transition energies are studied in group II to VI wide band gap semiconductors taking into account the geometrical confinement of the core and shell materials. ZnS/CdS, ZnS/CdSe, and CdS/CdSe are some group II to VI core/shell semiconducting materials, which are considered in the present work. The effects of internal electric field, due to spontaneous and piezoelectric polarization, are taken into consideration in the calculations. The dielectric-mismatch effect and the position-dependent effective mass are included in the Hamiltonian. The electronic properties are studied using the variational method and the optical properties are considered using the density matrix approach. All the properties are discussed for various ratios of core and shell radii of the materials in the strong confinement region. The effect of geometrical confinement on the Coulomb interaction energies in the core/shell materials is found. The oscillator strength is computed for these core/shell materials and the optical absorption coefficient as a function of photon energy is investigated in the strong and weak confinement regions. The result shows that the electronic and optical properties are dominant in the strong confinement region.

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Christina L. J. Paul, John Peter Amalorpavam, and Chang Woo Lee "Intraband optical transition energy in type-I group II to VI spherical quantum dots," Journal of Nanophotonics 9(1), 093069 (23 June 2015). https://doi.org/10.1117/1.JNP.9.093069

Published: 23 June 2015

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