7 August 2015 Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography
Author Affiliations +
J. of Nanophotonics, 9(1), 093062 (2015). doi:10.1117/1.JNP.9.093062
Surface-patterning technologies have enabled the improvement of currently existing light-emitting diodes (LEDs) and can be used to overcome the issue of low quantum efficiency of green GaN-based LEDs. We have applied nanosphere lithography to fabricate nanopillars on InGaN/GaN quantum-well LEDs. By etching through the active region, it is possible to improve both the light extraction efficiency and, in addition, the internal quantum efficiency through the effects of lattice strain relaxation. Nanopillars of different sizes are fabricated and analyzed using Raman spectroscopy. We have shown that nanopillar LEDs can be significantly improved by applying a combination of ion-damage curing techniques, including thermal and acidic treatment, and have analyzed their effects using x-ray photoelectron spectroscopy.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Ahmed Fadil, Yiyu Ou, Teng Zhan, Kaiyu Wu, Dmitry Suyatin, Weifang Lu, Paul Michael Petersen, Zhiqiang Liu, Haiyan Ou, "Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography," Journal of Nanophotonics 9(1), 093062 (7 August 2015). https://doi.org/10.1117/1.JNP.9.093062

Light emitting diodes

Gallium nitride

Indium gallium nitride



Reactive ion etching


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