7 August 2015 Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography
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Abstract
Surface-patterning technologies have enabled the improvement of currently existing light-emitting diodes (LEDs) and can be used to overcome the issue of low quantum efficiency of green GaN-based LEDs. We have applied nanosphere lithography to fabricate nanopillars on InGaN/GaN quantum-well LEDs. By etching through the active region, it is possible to improve both the light extraction efficiency and, in addition, the internal quantum efficiency through the effects of lattice strain relaxation. Nanopillars of different sizes are fabricated and analyzed using Raman spectroscopy. We have shown that nanopillar LEDs can be significantly improved by applying a combination of ion-damage curing techniques, including thermal and acidic treatment, and have analyzed their effects using x-ray photoelectron spectroscopy.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Ahmed Fadil, Ahmed Fadil, Yiyu Ou, Yiyu Ou, Teng Zhan, Teng Zhan, Kaiyu Wu, Kaiyu Wu, Dmitry Suyatin, Dmitry Suyatin, Weifang Lu, Weifang Lu, Paul Michael Petersen, Paul Michael Petersen, Zhiqiang Liu, Zhiqiang Liu, Haiyan Ou, Haiyan Ou, } "Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography," Journal of Nanophotonics 9(1), 093062 (7 August 2015). https://doi.org/10.1117/1.JNP.9.093062 . Submission:
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