24 March 2015 Processing of AlGaAs/GaAs quantum-cascade structures for terahertz laser
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Abstract
We report research results with regard to AlGaAs/GaAs structure processing for THz quantum-cascade lasers (QCLs). We focus on the processes of Ti/Au cladding fabrication for metal–metal waveguides and wafer bonding with indium solder. Particular emphasis is placed on optimization of technological parameters for the said processes that result in working devices. A wide range of technological parameters was studied using test structures and the analysis of their electrical, optical, chemical, and mechanical properties performed by electron microscopic techniques, energy dispersive x-ray spectrometry, secondary ion mass spectroscopy, atomic force microscopy, Fourier-transform infrared spectroscopy, and circular transmission line method. On that basis, a set of technological parameters was selected for the fabrication of devices lasing at a maximum temperature of 130 K from AlGaAs/GaAs structures grown by means of molecular beam epitaxy. Their resulting threshold-current densities were on a level of 1.5  kA/cm2. Furthermore, initial stage research regarding fabrication of Cu-based claddings is reported as these are theoretically more promising than the Au-based ones with regard to low-loss waveguide fabrication for THz QCLs.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Anna Szerling, Kamil Kosiel, Michal Szymanski, Zbig Wasilewski, Krystyna Golaszewska, Adam Laszcz, Mariusz Pluska, Artur Trajnerowicz, Maciej Sakowicz, Michal Walczakowski, Norbert Palka, Rafal Jakiela, Anna Piotrowska, "Processing of AlGaAs/GaAs quantum-cascade structures for terahertz laser," Journal of Nanophotonics 9(1), 093079 (24 March 2015). https://doi.org/10.1117/1.JNP.9.093079 . Submission:
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