6 March 2015 Fast and reliable approach to calculate energy levels in semiconductor nanostructures
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J. of Nanophotonics, 9(1), 093080 (2015). doi:10.1117/1.JNP.9.093080
We propose a method under the effective mass approximation with an original formulation that applies to quantum wells, circular quantum wires, and spherical quantum dots of arbitrary materials with sizes as small as 1 nm. Hundreds of structures are resolved on the second scale on a laptop, allowing for optimization procedures. We demonstrate its capability by confronting bandgap calculations with exhaustive literature data for CdS, CdSe, PbS, and PbSe nanoparticles. Our approach includes a correction of the mass to address the nonparabolicity of the band structure. The correction gives an accuracy comparable to more demanding calculation methods, such as eight-band k·p, tight-binding, or even semiempirical pseudopotential methods. The effect of the correction is shown on the intrasubband optical properties of InGaAs/AlGaAs coupled quantum wells.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
François Thierry, Judikaël Le Rouzo, François Flory, Gérard Berginc, Ludovic Escoubas, "Fast and reliable approach to calculate energy levels in semiconductor nanostructures," Journal of Nanophotonics 9(1), 093080 (6 March 2015). https://doi.org/10.1117/1.JNP.9.093080

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