6 March 2015 Fast and reliable approach to calculate energy levels in semiconductor nanostructures
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Abstract
We propose a method under the effective mass approximation with an original formulation that applies to quantum wells, circular quantum wires, and spherical quantum dots of arbitrary materials with sizes as small as 1 nm. Hundreds of structures are resolved on the second scale on a laptop, allowing for optimization procedures. We demonstrate its capability by confronting bandgap calculations with exhaustive literature data for CdS, CdSe, PbS, and PbSe nanoparticles. Our approach includes a correction of the mass to address the nonparabolicity of the band structure. The correction gives an accuracy comparable to more demanding calculation methods, such as eight-band k·p, tight-binding, or even semiempirical pseudopotential methods. The effect of the correction is shown on the intrasubband optical properties of InGaAs/AlGaAs coupled quantum wells.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
François Thierry, François Thierry, Judikaël Le Rouzo, Judikaël Le Rouzo, François Flory, François Flory, Gérard Berginc, Gérard Berginc, Ludovic Escoubas, Ludovic Escoubas, } "Fast and reliable approach to calculate energy levels in semiconductor nanostructures," Journal of Nanophotonics 9(1), 093080 (6 March 2015). https://doi.org/10.1117/1.JNP.9.093080 . Submission:
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