Cheap p- and n-doping for highly efficient organic devices

Ralf K. Krause; Frank Steinbacher; Günter Schmid; Jan H. Wemken; Arvid Hunze

doi:10.1117/1.3583639

1 January 2011 Cheap p- and n-doping for highly efficient organic devices

Ralf K. Krause, Frank Steinbacher, Günter Schmid, Jan H. Wemken, Arvid Hunze

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Journal of Photonics for Energy, Vol. 1, Issue 1, 011022 (January 2011). https://doi.org/10.1117/1.3583639

Abstract

Electrically doped, organic transport layers are important for today's high efficiency organic (opto-)electronic devices. Doped organic layers have a strongly increased free charge carrier density compared to their undoped counterparts and also improve the charge carrier injection from adjacent electrodes into the organics. For practical applications, especially in optoelectronics, these layers have to have low absorption in the wavelength range of interest. The two nearly colorless p- and n-doping materials, rhenium heptoxide and cesium carbonate, are investigated focusing on their conductivity enhancement, injection improvement, and voltage drop over doped transport layers in organic light emitting diodes. They show very good doping properties already at moderate doping concentrations and prove that they can be used in variable thicknesses without a significant voltage increase. This makes them cheap, low absorbing alternatives to today's, well-established doping systems.

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Ralf K. Krause, Frank Steinbacher, Günter Schmid, Jan H. Wemken, and Arvid Hunze "Cheap p- and n-doping for highly efficient organic devices," Journal of Photonics for Energy 1(1), 011022 (1 January 2011). https://doi.org/10.1117/1.3583639

Published: 1 January 2011

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