Cu(In,Ga)Se2 thin-film solar cells based on a simple sputtered alloy precursor and a low-cost selenization step

Veronika Haug; Ines Klugius; Theresa M. Friedlmeier; Aina Quintilla; Erik Ahlswede

doi:10.1117/1.3659500

1 January 2011 Cu(In,Ga)Se₂ thin-film solar cells based on a simple sputtered alloy precursor and a low-cost selenization step

Veronika Haug, Ines Klugius, Theresa M. Friedlmeier, Aina Quintilla, Erik Ahlswede

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Journal of Photonics for Energy, Vol. 1, Issue 1, 018002 (January 2011). https://doi.org/10.1117/1.3659500

Abstract

High-efficiency thin-film solar cells based on Cu(In,Ga)Se₂ are often formed by depositing precursor films and using a subsequent selenization step. We demonstrate a simple and cost-efficient approach simplifying both process steps by using a ternary Cu-In-Ga alloy target for sputter deposition of the precursor layer and by using a simple nonvacuum selenization reaction based on elemental selenium. In this contribution we examine in detail the characteristics of the precursor layers. The sputter growth is governed by a segregation of In-rich islands on top of a closed Cu-rich base. With optimized layers we could achieve conversion efficiencies well above 13% without the use of antireflective coating or metallic grids. The influence of the selenization duration on morphology and performance is discussed.

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Veronika Haug, Ines Klugius, Theresa M. Friedlmeier, Aina Quintilla, and Erik Ahlswede "Cu(In,Ga)Se₂ thin-film solar cells based on a simple sputtered alloy precursor and a low-cost selenization step," Journal of Photonics for Energy 1(1), 018002 (1 January 2011). https://doi.org/10.1117/1.3659500

Published: 1 January 2011

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KEYWORDS

Copper

Selenium

Thin film solar cells

Gallium

Indium

Copper indium gallium selenide

Solar cells

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