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16 June 2020 Internal quantum efficiency enhancement employing composition-graded last quantum barrier and electron blocking layer
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Abstract

We reduce the problem of asymmetrical distribution of carriers (electrons and holes) by engineering the last barrier and electron blocking layer (EBL) of green indium gallium nitride (InGaN)-based multiquantum well light-emitting diodes. We employ stair-engineered EBL with a graded InGaN last quantum barrier to enhance the device performance. The efficiency droop ratio of the proposed device is ∼15  %   at 100  A  /  cm2. Similarly, the light output power is also enhanced by about three times, as compared to the reference structure. In addition, a carrier transport issue across the active region is also mitigated in our design.

© 2020 Society of Photo-Optical Instrumentation Engineers (SPIE) 1947-7988/2020/$28.00 © 2020 SPIE
Muhammad Usman, Abdur-Rehman Anwar, and Munaza Munsif "Internal quantum efficiency enhancement employing composition-graded last quantum barrier and electron blocking layer," Journal of Photonics for Energy 10(2), 024505 (16 June 2020). https://doi.org/10.1117/1.JPE.10.024505
Received: 23 January 2020; Accepted: 3 June 2020; Published: 16 June 2020
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