6 April 2012 Publisher's Note: Growth and characterization of InxGa1−xN alloys by metalorganic chemical vapor deposition for solar cell applications
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J. of Photonics for Energy, 2(1), 020101 (2012). doi:10.1117/1.JPE.2.020101
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Huang, Melton, Jampana, Jamil, Ryou, Dupuis, and Ferguson: Publisher’s Note: Growth and characterization of InxGa1−xN alloys by metalorganic chemical vapor deposition for solar cell applications

This article was originally published in Vol. 2 of the Journal of Photonics for Energy on 23 February 2012 in the wrong section of the table of contents and with an incorrect citation identifier (CID) of 017001. The paper was removed and republished online with the correct CID of 028501 on 13 March 2012. This change was made in order for the paper to appear under the correct section heading, “Materials Synthesis, Deposition, and Processing.”

For more information on the use of CIDs in JPE, see http://spiedigitallibrary.org/jpe/citation_format.

Yong Huang, Jae-Hyun Ryou, Russell D. Dupuis, Andrew G. Melton, Muhammad Jamil, Ian T. Ferguson, Balakrishnam Jampana, "Publisher's Note: Growth and characterization of InxGa1−xN alloys by metalorganic chemical vapor deposition for solar cell applications," Journal of Photonics for Energy 2(1), 020101 (6 April 2012). http://dx.doi.org/10.1117/1.JPE.2.020101
Submission: Received ; Accepted
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KEYWORDS
Solar cells

Metalorganic chemical vapor deposition

Materials science

Computer engineering

Gallium

Data processing

Compound semiconductors

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