Microphotoluminescence study of Cu2ZnSnS4 polycrystals

Maarja Grossberg; Pille Salu; Jaan Raudoja; Jyri Krustok

doi:10.1117/1.JPE.3.030599

3 June 2013 Microphotoluminescence study of Cu2ZnSnS4 polycrystals

Maarja Grossberg, Pille Salu, Jaan Raudoja, Jyri Krustok

Author Affiliations +

Journal of Photonics for Energy, Vol. 3, Issue 1, 030599 (June 2013). https://doi.org/10.1117/1.JPE.3.030599

Abstract

Microphotoluminescence studies of Cu ₂ ZnSnS ⁴ polycrystals were performed. At room temperature, two photoluminescence (PL) bands were detected at 1.39 and 1.53 eV and attributed to band-to-tail (BT) and band-to-band (BB) recombination, respectively. At lower temperatures, band-to-impurity recombination always dominates. The results show that the model of heavily doped semiconductors applies to Cu ² ZnSnS ₄ and that, in contrast to the ternary chalcopyrites, the BT recombination in Cu ₂ZnSnS ₄ has very low intensity. The laser power dependency of the PL intensity shows that the recombination mechanism of BT and BB bands exhibits an exciton-like behavior.

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Maarja Grossberg, Pille Salu, Jaan Raudoja, and Jyri Krustok "Microphotoluminescence study of Cu2ZnSnS4 polycrystals," Journal of Photonics for Energy 3(1), 030599 (3 June 2013). https://doi.org/10.1117/1.JPE.3.030599

Published: 3 June 2013

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