25 July 2014 Analysis of bulk heterojunction material parameters using lateral device structures
Author Affiliations +
J. of Photonics for Energy, 4(1), 040994 (2014). doi:10.1117/1.JPE.4.040994
Abstract
We review the key optoelectronic properties of lateral organic bulk heterojunction (BHJ) device structures with asymmetric contacts. These structures are used to develop a detailed model of charge transport and recombination properties within materials used for organic photovoltaics. They permit a variety of direct measurement techniques, such as nonlinear optical microscopy and <italic<in situ</italic< potentiometry, as well as photoconductive gain and carrier drift length studies from photocurrent measurements. We present a theoretical framework that describes the charge transport physics within these devices. The experimental results presented are in agreement with this framework and can be used to measure carrier concentrations, recombination coefficients, and carrier mobilities within BHJ materials. Lateral device structures offer a useful complement to measurements on vertical photovoltaic structures and provide a more complete and detailed picture of organic BHJ materials.
Eric Danielson, Zi-En Ooi, Kelly Liang, Joshua Morris, Christopher J. Lombardo, Ananth Dodabalapur, "Analysis of bulk heterojunction material parameters using lateral device structures," Journal of Photonics for Energy 4(1), 040994 (25 July 2014). http://dx.doi.org/10.1117/1.JPE.4.040994
JOURNAL ARTICLE
17 PAGES


SHARE
KEYWORDS
Heterojunctions

Electrodes

Microscopy

Instrument modeling

Measurement devices

In situ metrology

Aluminum

Back to Top