28 April 2014 ZnO nanowire arrays synthesized on ZnO and GaN films for photovoltaic and light-emitting devices
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J. of Photonics for Energy, 4(1), 041599 (2014). doi:10.1117/1.JPE.4.041599
The wide bandgap, one-dimensional zinc oxide (ZnO) nanowires (NWs) and their heterostructures with other materials provide excellent pathways for efficient photovoltaic (PV) and light-emitting devices. ZnO NWs sensitized with quantum dots (QDs) provide high-surface area and tunable bandgap absorbers with a directional path for carriers in advanced PV devices, while ZnO heterojunctions with other p-type wide bandgap materials lead to light-emitting diodes (LEDs) with better emission and waveguiding properties compared with the homojunction counterparts. Synthesis of the structures with the desired morphology is a key to device applications. In this work, ZnO NW arrays were synthesized using hydrothermal method on ZnO and GaN thin films. Highly crystalline, upright, and ordered arrays of ZnO NWs in the 50 to 250-nm diameter range and 1
© 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)
Bita Janfeshan, Bahareh Sadeghimakki, Navid Mohammad Sadeghi Jahed, Siva Sivoththaman, "ZnO nanowire arrays synthesized on ZnO and GaN films for photovoltaic and light-emitting devices," Journal of Photonics for Energy 4(1), 041599 (28 April 2014). https://doi.org/10.1117/1.JPE.4.041599


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