9 July 2015 Investigation of optical and electrical properties of GaN-based blue light-emitting diodes with various quantum well thicknesses
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Abstract
Optical and electrical properties of gallium nitride (GaN)-based blue light-emitting diodes (LEDs) with various indium gallium nitride (InGaN) quantum well (QW) thicknesses were investigated. As the QW thickness was increased, the light output power of GaN-based LEDs also increased. The increase can be attributed to the increase in the carrier radiative recombination rate in the active region. However, the turn-on voltages of these fabricated LEDs are different. This was attributed to the increase in the polarization field with increasing QW thickness. In regard to the hot/cold factor, LEDs with a thicker QW achieved better performance at a low-injection current owing to the lower defect density. The hot/cold factor at a high-injection current would be mainly influenced by the efficiency droop mechanism.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Ying-Wen Lin, Ying-Wen Lin, Chun-Kai Wang, Chun-Kai Wang, Yu-Zung Chiou, Yu-Zung Chiou, Hung-Ming Chang, Hung-Ming Chang, Shoou-Jinn Chang, Shoou-Jinn Chang, } "Investigation of optical and electrical properties of GaN-based blue light-emitting diodes with various quantum well thicknesses," Journal of Photonics for Energy 5(1), 057612 (9 July 2015). https://doi.org/10.1117/1.JPE.5.057612 . Submission:
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