4 May 2016 Silicon on glass grown from indium and tin solutions
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A two-step process is used to grow crystalline silicon (c-Si) on glass at low temperatures. In the first step, nanocrystalline seed layers are formed at temperatures in the range of 230 to 400°C by either metal-induced crystallization or by direct deposition on heated substrates. In the second step, c-Si is grown on the seed layer by steady-state liquid phase epitaxy at a temperature range of 580 to 710°C. Microcrystalline Si layers with grain sizes of up to several tens of micrometers are grown from In and Sn solutions. Three-dimensional simulations of heat and convective flow in the crucible have been conducted and give valuable insights into the growth process. The experimental results are promising with regard to the designated use of the material in photovoltaics.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
Roman Bansen, Roman Bansen, Christian Ehlers, Christian Ehlers, Thomas Teubner, Thomas Teubner, Klaus Böttcher, Klaus Böttcher, Karen Gambaryan, Karen Gambaryan, Jan Schmidtbauer, Jan Schmidtbauer, Torsten Boeck, Torsten Boeck, } "Silicon on glass grown from indium and tin solutions," Journal of Photonics for Energy 6(2), 025501 (4 May 2016). https://doi.org/10.1117/1.JPE.6.025501 . Submission:

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