11 January 2017 Growth of hierarchical GaN nanowires for optoelectronic device applications
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Abstract
Gallium nitride nanostructures have been receiving considerable attention as building blocks for nanophotonic technologies due to their unique high aspect ratios, promising the realization of photonic and biological nanodevices such as blue light emitting diodes (LEDs), short-wavelength ultraviolet nanolasers, and nanofluidic biochemical sensors. We report on the growth of hierarchical GaN nanowires (NWs) by dynamically adjusting the growth parameters using the pulsed flow metal-organic chemical vapor deposition technique. We carried out two step growth processes to grow hierarchical GaN NWs. In the first step, the GaN NWs were grown at 950°C, and in the second, we suitably decreased the growth temperature to 630°C and 710°C to grow the hierarchical structures. The surface morphology and optical characterization of the grown GaN NWs were studied by field-emission scanning electron microscopy, high-resolution transmission electron microscopy, photoluminescence, and cathodoluminescence measurements. These kinds of hierarchical GaN NWs are promising for allowing flat band quantum structures that are shown to improve the efficiency of LEDs.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)
Rishabh Raj, Rishabh Raj, Veeramuthu Vignesh, Veeramuthu Vignesh, Yong-Ho Ra, Yong-Ho Ra, Rajkumar Nirmala, Rajkumar Nirmala, Cheul-Ro Lee, Cheul-Ro Lee, Rangaswamy Navamathavan, Rangaswamy Navamathavan, } "Growth of hierarchical GaN nanowires for optoelectronic device applications," Journal of Photonics for Energy 7(1), 016001 (11 January 2017). https://doi.org/10.1117/1.JPE.7.016001 . Submission: Received: 27 June 2016; Accepted: 19 December 2016
Received: 27 June 2016; Accepted: 19 December 2016; Published: 11 January 2017
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