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7 April 2017 Design of thin InGaAsN(Sb) n - i - p junctions for use in four-junction concentrating photovoltaic devices
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Abstract
Four-junction solar cells for space and terrestrial applications require a junction with a band gap of 1    eV for optimal performance. InGaAsN or InGaAsN(Sb) dilute nitride junctions have been demonstrated for this purpose, but in achieving the 14    mA / cm 2 short-circuit current needed to match typical GaInP and GaAs junctions, the open-circuit voltage ( V OC ) and fill factor of these junctions are compromised. In multijunction devices incorporating materials with short diffusion lengths, we study the use of thin junctions to minimize sensitivity to varying material quality and ensure adequate transmission into lower junctions. An n - i - p device with 0.65 - μ m absorber thickness has sufficient short-circuit current, however, it relies less heavily on field-aided collection than a device with a 1 - μ m absorber. Our standard cell fabrication process, which includes a rapid thermal anneal of the contacts, yields a significant improvement in diffusion length and device performance. By optimizing a four-junction cell around a smaller 1-sun short-circuit current of 12.5    mA / cm 2 , we produced an InGaAsN(Sb) junction with open-circuit voltage of 0.44 V at 1000 suns ( 1    sun = 100    mW / c
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)
Matthew M. Wilkins, James Gupta, Abdelatif Jaouad, Boussairi Bouzazi, Simon Fafard, Abderraouf Boucherif, Christopher E. Valdivia, Richard Arès, Vincent Aimez, Henry P. Schriemer, Karin Hinzer, "Design of thin InGaAsN(Sb) n - i - p junctions for use in four-junction concentrating photovoltaic devices," Journal of Photonics for Energy 7(2), 022502 (7 April 2017). https://doi.org/10.1117/1.JPE.7.022502 . Submission: Received: 20 July 2016; Accepted: 29 November 2016
Received: 20 July 2016; Accepted: 29 November 2016; Published: 7 April 2017
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