21 August 2017 Broken-gap quantum-well tunnel junctions grown on GaSb substrates
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Abstract
A tunnel junction has been developed with an application to multijunction solar cells grown on GaSb and analyzed using a combination of electrical device measurements and modeling. The device employs an InAs quantum well embedded in a GaSb p/n junction, exploiting the high tunnel probability at the broken-gap interface between p-type GaSb and n-type InAs and having a minimal impact on the transparency of the device. The concept is extended to wider bandgap heterointerfaces using Al0.2Ga0.8Sb, achieving a differential resistance of 4.08×10−4  Ω cm2.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)
Matthew P. Lumb, Shawn Mack, Maria Gonzalez, Kenneth J. Schmieder, Mitchell F. Bennett, Chaffra A. Affouda, James E. Moore, Robert J. Walters, "Broken-gap quantum-well tunnel junctions grown on GaSb substrates," Journal of Photonics for Energy 7(3), 032501 (21 August 2017). https://doi.org/10.1117/1.JPE.7.032501 . Submission: Received: 24 March 2017; Accepted: 21 July 2017
Received: 24 March 2017; Accepted: 21 July 2017; Published: 21 August 2017
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