14 September 2017 Structural and electrical investigations of a-Si:H(i) and a-Si∶H(n+) stacked layers for improving the interface and passivation qualities
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Abstract
A symmetrically stacked structure [(a-Si∶H(n+)/a-Si:H(i)/CZ wafer (n)/a-Si:H(i)/a-Si:H(n+)] was used to optimize the growth process conditions of the n-type hydrogenated amorphous silicon [a-Si∶H(n+)] thin films. Here a-Si:H(n+) film was used as back surface field (BSF) layer for the silicon heterojunction solar cell and all stacked films were prepared by conventional radio-frequency plasma-enhanced chemical vapor deposition. The characterizations of the effective carrier lifetime (τeff), electrical and structural properties, as well as correlation with the hydrogen dilution ratio (R = H2∕SiH4) were systematically discussed with the emphasis on the effectiveness of the passivation layer using the lifetime tester, spectroscopic ellipsometry, and hall measurement. High quality of a stacked BSF layer (intrinsic/n-type a-Si:H layer) with effective carrier lifetime of 1.8 ms can be consistently obtained. This improved passivation layer can be primarily attributed to the synergy of chemical and field effect to significantly reduce the surface recombination.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)
Yu-Lin Hsieh, Yu-Lin Hsieh, Chien-Chieh Lee, Chien-Chieh Lee, Chia-Cheng Lu, Chia-Cheng Lu, Yiin-Kuen Fuh, Yiin-Kuen Fuh, Jenq-Yang Chang, Jenq-Yang Chang, Ju-Yi Lee, Ju-Yi Lee, Tomi T. Li, Tomi T. Li, } "Structural and electrical investigations of a-Si:H(i) and a-Si∶H(n+) stacked layers for improving the interface and passivation qualities," Journal of Photonics for Energy 7(3), 035503 (14 September 2017). https://doi.org/10.1117/1.JPE.7.035503 . Submission: Received: 2 June 2017; Accepted: 22 August 2017
Received: 2 June 2017; Accepted: 22 August 2017; Published: 14 September 2017
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