Chemical amplification positive deep ultraviolet resist by means of partially tetrahydropyranyl-protected polyvinylphenol

Takashi Hattori; Leo Schlegel; Akira Imai; Nobuaki Hayashi; Takumi Ueno

doi:10.1117/12.145971

1 October 1993 Chemical amplification positive deep ultraviolet resist by means of partially tetrahydropyranyl-protected polyvinylphenol

Takashi Hattori, Leo Schlegel, Akira Imai, Nobuaki Hayashi, Takumi Ueno

Author Affiliations +

Optical Engineering, Vol. 32, Issue 10, (October 1993). https://doi.org/10.1117/12.145971

Abstract

Chemical amplification positive resists using tetrahydropyranyl-protected polyvinylphenol (THP-M) are investigated for deep-UV lithography. Infrared spectroscopy meansurements show that THP-M in the resist film cannot be completely deprotected by photogenerated acid. This causes a poor developability of the resist containing highly tetrahydropyranyl (THP) protected polyvinylphenol in an aqueous base developer. To improve the developability in the pure aqueous base developer, we use partially THP-protected polyvinylphenol. To determine the optimum protection degree, we examine the relation between the dissolution rate of THP-M films and THP-protection degree in developers. A resist formulated from 20% THP-protected polyvinylphenol and bis(tert-butylphenyl)iodonium triflate resolved 0.30-μm line-and-space patterns with the aqueous base development using a KrF excimer laser stepper with a dose of 46 mJ/cm². Postexposure delay effects of this resist system are also studied. The deprotection reaction of THP-M for lower dose during the holding time at room temperature and incomplete deprotection reaction for higher dose are found to deteriorate the exposure characteristics.

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Takashi Hattori, Leo Schlegel, Akira Imai, Nobuaki Hayashi, and Takumi Ueno "Chemical amplification positive deep ultraviolet resist by means of partially tetrahydropyranyl-protected polyvinylphenol," Optical Engineering 32(10), (1 October 1993). https://doi.org/10.1117/12.145971

Published: 1 October 1993

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