1 January 1994 High-performance 5-μm 640 x 480 HgCdTe-on-sapphire focal plane arrays
Lester J. Kozlowski, Robert B. Bailey, Scott A. Cabelli, Donald E. Cooper, Isoris S. Gergis, Annie Chi-yi Chen, William V. McLevige, Gary L. Bostrup, Kadri Vural, William E. Tennant, Philip E. Howard
Author Affiliations +
Abstract
A high-performance 5-μm 640 X 480 HgCdTe/CdTe/Al2O3 infrared focal plane array (FPA) that offers full TV-compatible resolution with excellent sensitivity at temperatures below 120 K has been developed. Mean FPA D* at 95 K and background of 1014 photons/cm2 s is background-limited at ~1 x 1012 cm Hz1/2/W for the typical mean quantum efficiency of 60 to 70%. The key technology making this large, high-sensitivity device producible is the epitaxial growth of HgCdTe on a rugged CdTe-buffered sapphire substrate. Mean camera noise-equivalent temperature difference NEΔT of 13 mK has been achieved at ≤ 120 K operating temperature and 3.4- to 4.2-μm passband; this is about an order of magnitude better than similar currently available cameras, which use PtSi FPAs and require cooling to ≤ 77 K to maintain performance at low scene temperatures.
Lester J. Kozlowski, Robert B. Bailey, Scott A. Cabelli, Donald E. Cooper, Isoris S. Gergis, Annie Chi-yi Chen, William V. McLevige, Gary L. Bostrup, Kadri Vural, William E. Tennant, and Philip E. Howard "High-performance 5-μm 640 x 480 HgCdTe-on-sapphire focal plane arrays," Optical Engineering 33(1), (1 January 1994). https://doi.org/10.1117/12.151551
Published: 1 January 1994
Lens.org Logo
CITATIONS
Cited by 15 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Sensors

Staring arrays

Mercury cadmium telluride

Quantum efficiency

Long wavelength infrared

Cameras

Mid-IR

RELATED CONTENT

MWIR and LWIR megapixel QWIP focal plane arrays
Proceedings of SPIE (October 21 2004)
HgCdTe performance for high operating temperatures
Proceedings of SPIE (October 26 1998)
640 x 480 PACE HgCdTe FPA
Proceedings of SPIE (December 10 1992)
Large-format IRFPA development on silicon
Proceedings of SPIE (October 22 2004)

Back to Top