Molecular beam epitaxy HgCdTe infrared photovoltaic detectors

Jose M. Arias; John G. Pasko; Majid Zandian; Lester J. Kozlowski; Roger E. DeWames

doi:10.1117/12.165818

1 May 1994 Molecular beam epitaxy HgCdTe infrared photovoltaic detectors

Jose M. Arias, John G. Pasko, Majid Zandian, Lester J. Kozlowski, Roger E. DeWames

Author Affiliations +

Optical Engineering, Vol. 33, Issue 5, (May 1994). https://doi.org/10.1117/12.165818

Abstract

We present p-on-n heterostructure HgCdTe photovoltaic device data that illustrate the high performance and flexibility in band-gap control of molecular beam epitaxy technology. This flexibility demonstration was performed by growing material for operation in the following cutoff wavelength (λ_co) ranges of interest: long wavelength IR (LWIR) [λ_co(77 K) = 9 to 11 μm], mid-long wavelength IR (MLWIR) [λ_co(77 K) = 6.8 μm], and very long wavelength IR (VLWIR) [λ_co(40 K)=20 μm]. Detailed analyses of the current-voltage characteristics of these diodes as a function of temperature show that their dark currents are diffusion limited down to 80, 50, and 30 K for the MLWIR, LWIR, and VLWIR photodiodes, respectively. In general, the R₀A device values were uniform for the three band-gap ranges when operating under diffusionlimited conditions. We confirmed this by fabricating a 64 x 64 LWIR (λ_co = 10.2 μm) hybrid FPA with detectivity (D*) operability greater than 97% when operating at 77 K. The mean D* value for this device was 1.4 x 10¹¹ cm Hz^1/2/W and it was background limited at the tested flux of 2.18 x 10¹⁶ photons/cm² s. This device was tested at higher temperatures of operation without changing background conditions, and it remained background limited up to 100 K.

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Jose M. Arias, John G. Pasko, Majid Zandian, Lester J. Kozlowski, and Roger E. DeWames "Molecular beam epitaxy HgCdTe infrared photovoltaic detectors," Optical Engineering 33(5), (1 May 1994). https://doi.org/10.1117/12.165818

Published: 1 May 1994

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