Noise analysis of an optically controlled metal semiconductor field effect transistor at microwave frequencies

P. Chakrabarti; Badri Nath Tiwari; Suman Kumar

doi:10.1117/1.1532332

1 February 2003 Noise analysis of an optically controlled metal semiconductor field effect transistor at microwave frequencies

P. Chakrabarti, Badri Nath Tiwari, Suman Kumar

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Optical Engineering, Vol. 42, Issue 2, (February 2003). https://doi.org/10.1117/1.1532332

An analytical model has been developed to theoretically examine the noise performance of an optically controlled GaAs metal semiconductor field effect transistor (MESFET) at microwave frequencies. The model enables one to characterize the device under optically controlled conditions in both linear and saturation regions. It is seen that the photogenerated carriers play a significant role in deciding the overall noise performance of the device. The output signal to noise ratio depends on the frequency of operation of the device and also on the incident optical power. The device comparatively exhibits a high value of noise equivalent power that may make it less attractive as a photodetector.

©(2003) Society of Photo-Optical Instrumentation Engineers (SPIE)

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P. Chakrabarti, Badri Nath Tiwari, and Suman Kumar "Noise analysis of an optically controlled metal semiconductor field effect transistor at microwave frequencies," Optical Engineering 42(2), (1 February 2003). https://doi.org/10.1117/1.1532332

Published: 1 February 2003

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