Semiconductor optical amplifier optical gate with graded strained bulk-like active structure

Ruiying Zhang; Jie Dong; Zhiwei Feng; Fan Zhou; H. L. Tian; H. Y. Shu; Lingjuan Zhao; J. Bian; Wei Wang

doi:10.1117/1.1539053

1 March 2003 Semiconductor optical amplifier optical gate with graded strained bulk-like active structure

Ruiying Zhang, Jie Dong, Zhiwei Feng, Fan Zhou, H. L. Tian, H. Y. Shu, Lingjuan Zhao, J. Bian, Wei Wang

Optical Engineering, Vol. 42, Issue 3, (March 2003). https://doi.org/10.1117/1.1539053

A novel semiconductor optical amplifier (SOA) optical gate with a graded strained bulk-like active structure is proposed. A fiber-to-fiber gain of 10 dB when the coupling loss reaches 7 dB/factet and a polarization insensitivity of less than 0.9 dB for multiwavelength and different power input signals over the whole operation current are obtained. Moreover, for our SOA optical gate, a no-loss current of 50 to 70 mA and an extinction ratio of more than 50 dB are realized when the injection current is more than no-loss current, and the maximum extinction ratio reaches 71 dB, which is critical for crosstalk suppression.

©(2003) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Ruiying Zhang, Jie Dong, Zhiwei Feng, Fan Zhou, H. L. Tian, H. Y. Shu, Lingjuan Zhao, J. Bian, and Wei Wang "Semiconductor optical amplifier optical gate with graded strained bulk-like active structure," Optical Engineering 42(3), (1 March 2003). https://doi.org/10.1117/1.1539053

Published: 1 March 2003

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