Reliability characterization of silicon-based germanium waveguide photodetectors

Zhijuan Tu; Zhiping Zhou; Xingjun Wang

doi:10.1117/1.OE.53.5.057103

5 May 2014 Reliability characterization of silicon-based germanium waveguide photodetectors

Zhijuan Tu, Zhiping Zhou, Xingjun Wang

Author Affiliations +

Optical Engineering, Vol. 53, Issue 5, 057103 (May 2014). https://doi.org/10.1117/1.OE.53.5.057103

Abstract

A silicon-based germanium waveguide photodetector was demonstrated and its reliability related items were investigated. For different reverse biases, the slopes of the dark current increment versus stress time curves were first found to be the same, which made the lifetime extrapolation feasible. The lifetime of the photodetector under different bias was predicted by using a simple extrapolation method. In order to maintain the 10-year lifetime of the photodetector, the bias voltage should be kept lower than −3 V . For the first time, the degradation mechanism under stress biases was analyzed in detail by the reaction-diffusion (RD) model. The experimental results agree well with the theoretical derivation based on RD model.

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Zhijuan Tu, Zhiping Zhou, and Xingjun Wang "Reliability characterization of silicon-based germanium waveguide photodetectors," Optical Engineering 53(5), 057103 (5 May 2014). https://doi.org/10.1117/1.OE.53.5.057103

Published: 5 May 2014

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