Influence of outgassing organic contamination on the transmittance and laser‐induced damage of SiO2 sol‐gel antireflection film

Liang Yang; Xia Xiang; Xinxiang Miao; Zhijie Li; Guorui Zhou; Zhonghua Yan; Xiaodong Yuan; Wanguo Zheng; Xiaotao Zu

doi:10.1117/1.OE.54.12.126101

8 December 2015 Influence of outgassing organic contamination on the transmittance and laser‐induced damage of SiO2 sol‐gel antireflection film

Liang Yang, Xia Xiang, Xinxiang Miao, Zhijie Li, Guorui Zhou, Zhonghua Yan, Xiaodong Yuan, Wanguo Zheng, Xiaotao Zu

Author Affiliations +

Optical Engineering, Vol. 54, Issue 12, 126101 (December 2015). https://doi.org/10.1117/1.OE.54.12.126101

Abstract

The influence of organic contamination (rubber outgassing) on the transmittance of the SiO₂ sol‐gel antireflection (AR) film and laser‐induced damage threshold (LIDT) at 355 nm for 3ω AR film and at 1064 nm for 1ω AR film is studied. The correlation between the contamination time and the transmittance loss/LIDT of 1ω/3ω AR film is also investigated both in atmospheric and vacuum environments. The results show that the transmittance loss increases with increasing contamination time, and the LIDT decreases with increasing contamination time for both in atmospheric and vacuum environments. In addition, the resistance against contamination of the 1ω film is stronger than 3ω film, and the contamination is more serious in vacuum than in an atmosphere environment for the same contamination time. Meanwhile, the damage mechanism is also discussed. It indicated that both the porous structure and photo‐thermal absorption contribute to the decreasing LIDT of the sol‐gel AR film.

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Liang Yang, Xia Xiang, Xinxiang Miao, Zhijie Li, Guorui Zhou, Zhonghua Yan, Xiaodong Yuan, Wanguo Zheng, and Xiaotao Zu "Influence of outgassing organic contamination on the transmittance and laser‐induced damage of SiO2 sol‐gel antireflection film," Optical Engineering 54(12), 126101 (8 December 2015). https://doi.org/10.1117/1.OE.54.12.126101

Published: 8 December 2015

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