Electrical and optical performances of InGaAs/GaAsSb superlattice short-wavelength infrared detectors

Chuan Jin; Jianxin Chen; Qingqing Xu; ChengZhang Yu; Li He

doi:10.1117/1.OE.56.5.057102

4 May 2017 Electrical and optical performances of InGaAs/GaAsSb superlattice short-wavelength infrared detectors

Chuan Jin, Jianxin Chen, Qingqing Xu, ChengZhang Yu, Li He

Author Affiliations +

Optical Engineering, Vol. 56, Issue 5, 057102 (May 2017). https://doi.org/10.1117/1.OE.56.5.057102

Abstract

We report on a p-i-n photodetector based on type II InGaAs/GaAsSb SLs with a cutoff wavelength of 2.5 μm at room temperature. High quality materials were grown on an n-type (100) InP substrate by molecular beam epitaxy. Photoluminescence spectroscopy peak of the SLs around 2.5 μm and atomic steps in the atomic force microscope image were clearly observed. A device with the 100% cutoff wavelength of 2.5 μm at 293 K was fabricated. Temperature-dependent current-voltage measurements show that the diffusion current and generation-recombination current dominate at temperatures higher than 200 K while the generation-recombination current and trap-assisted tunneling current dominate at temperatures below 200 K. The optical response measurement quantum efficiency increases with reverse bias, and a diffusion length of 0.3 μm was extracted. The cause of the small diffusion length and possible approaches to improve it were briefly discussed.

Citation Download Citation

Chuan Jin, Jianxin Chen, Qingqing Xu, ChengZhang Yu, and Li He "Electrical and optical performances of InGaAs/GaAsSb superlattice short-wavelength infrared detectors," Optical Engineering 56(5), 057102 (4 May 2017). https://doi.org/10.1117/1.OE.56.5.057102

Received: 3 November 2016; Accepted: 19 April 2017; Published: 4 May 2017

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