Uncooled middle wavelength infrared photoconductors based on (111) and (100) oriented HgCdTe

Pawel Madejczyk; Artur Kębłowski; Waldemar Gawron; Piotr Martyniuk; Małgorzata Kopytko; Dawid Stępień; Jaroslaw Rutkowski; Józef Piotrowski; Adam Piotrowski; Antoni Rogalski

doi:10.1117/1.OE.56.9.091602

5 January 2017 Uncooled middle wavelength infrared photoconductors based on (111) and (100) oriented HgCdTe

Pawel Madejczyk, Artur Kębłowski, Waldemar Gawron, Piotr Martyniuk, Małgorzata Kopytko, Dawid Stępień, Jaroslaw Rutkowski, Józef Piotrowski, Adam Piotrowski, Antoni Rogalski

Author Affiliations +

Optical Engineering, Vol. 56, Issue 9, 091602 (January 2017). https://doi.org/10.1117/1.OE.56.9.091602

Abstract

We present progress in metal organic chemical vapor deposition (MOCVD) growth of (100) HgCdTe epilayers achieved recently at the Institute of Applied Physics, Military University of Technology and Vigo System S.A. It is shown that MOCVD technology is an excellent tool for the fabrication of different HgCdTe detector structures with a wide range of composition, donor/acceptor doping, and without post grown ex-situ annealing. Surface morphology, residual background concentration, and acceptor doping efficiency are compared in (111) and (100) oriented HgCdTe epilayers. At elevated temperatures, the carrier lifetime in measured p-type photoresistors is determined by Auger 7 process with about one order of magnitude difference between theoretical and experimental values. Particular progress has been achieved in the growth of (100) HgCdTe epilayers for medium wavelength infrared photoconductors operated in high-operating temperature conditions.

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Pawel Madejczyk, Artur Kębłowski, Waldemar Gawron, Piotr Martyniuk, Małgorzata Kopytko, Dawid Stępień, Jaroslaw Rutkowski, Józef Piotrowski, Adam Piotrowski, and Antoni Rogalski "Uncooled middle wavelength infrared photoconductors based on (111) and (100) oriented HgCdTe," Optical Engineering 56(9), 091602 (5 January 2017). https://doi.org/10.1117/1.OE.56.9.091602

Received: 5 July 2016; Accepted: 29 November 2016; Published: 5 January 2017

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