1 August 1975 Recent Infrared Detector Developments for Future Remote Sensor Applications
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Molecular beam epitaxy has been applied as a technique for growing low carrier concentration, single crystal thin films of lead-tin-telluride suitable for fabrication of infrared detect-ors in the wavelength region of 3 to 14 um. Lead-tin-tellur-ide photodiode detectors with background-limited performance in the 8 to 14 pm band at 77°K have been fabricated. Twenty-five element linear arrays of lead-tin-telluride detect-ors have been fabricated and flip-chip bonded to an alumina substrate.
D. P. Mathur, D. P. Mathur, } "Recent Infrared Detector Developments for Future Remote Sensor Applications," Optical Engineering 14(4), 144351 (1 August 1975). https://doi.org/10.1117/12.7971844 . Submission:


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