1 June 1977 Infrared Charge Transfer Devices: The Silicon Approach
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Abstract
Possible system applications of Infrared Charge Transfer Devices are reviewed. It is found that this device technology can have a very significant systems impact. Analyses are performed to calculate the quantum efficiency, quantum yield, frequency response, photoconductive gain, operating temperature, noise and the distinction between longitudinal and transverse bias configurations of silicon detectors. Tables of silicon detector properties are included. Approaches to the interface circuitry which couples the detectors and the CTD multiplexer are examined. Examples of existing low background and high background IRCTD detector arrays are given.
Richard D. Nelson, "Infrared Charge Transfer Devices: The Silicon Approach," Optical Engineering 16(3), 163275 (1 June 1977). https://doi.org/10.1117/12.7972144 . Submission:
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