Thin film evaporation and sputtering methods in conjunction with photolithographic fabrication techniques provide a simple means for producing useful electro-optical devices. Multilayer Cd 1-xZnxS (CZS) compound photoconductive film deposited with rf sputtering exhibits a spectral response which can be varied between 360 nm to 530 nm. The CZS films exhibit a rise time of 1 pt sec, have good optical transmission characteristics, exhibit a photoconductive gain of approximately 10, respond to 400 mw laser pulses in a 1 mm spot and provide film breakdown strength of 30 x 104 volt/cm. Multilayer CZS films exhibit less photoconductive gain and higher breakdown strength than single layer films. Sn doped indium oxide (ITO) films are produced with magnetron rf sputtering. The conductivity and transmissivity of the ITO films are critically influenced by the amount of free oxygen present during the sputtering deposition. An 02 partial pressure of 4 x 105 results in greater than 80% transmissivity at 600 nm with a bulk conductivity of 100 mhos/cm. The film transmissivity can be substantially increased in the visible spectrum by post heat treatment in an air oven at 300 C for 20 minutes. A scanning cursor device for graphical data extraction was fabricated using various thin film techniques.
Michael R. Smith,
Irving J. Bell,
"Electro-Optical Thin Films For Data Storage And Display," Optical Engineering 17(4), 174416 (1 August 1978). https://doi.org/10.1117/12.7972254