The exposure of certain positive photoresists has been shown by Dill and co-workers to be modelable in terms of a local inhibitor concentration which results in a local development rate. The development process is assumed to be a surface etching reaction in which the surface velocity is the local development rate. The characterization of resists for the purpose of line-edge profile simulation therefore involves the measurement of development rate for controlled exposure dose profiles. In this paper a technique is described in which the resist thickness is continuously plotted during development. The low frequency capacitance is measured using a conducting substrate as one plate, and the highly conductive developer as the other plate of the capacitor. The inverse capacitance, proportional to the composite resist-oxide thickness, is obtained using an analog divider. Examples of standing wave effects in Shipley AZ 1350 resists, and resist development rate modification using chlorobenzene are presented.