1 October 1979 Evaluation Of A Schottky Infrared Charge-Coupled Device (IRCCD) Staring Mosaic Focal Plane
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We describe the operation and performance of two Schottky infrared charge-coupled device (IRCCD) staring sensors. Both sensors are monolithic and are fabricated from conventional integrated circuit grade silicon. The devices include a 256 element linear array and a 25 x 50 element area array of PtSi Schottky photodiodes which are sensitive from 1.1 to 4.6 pm. The 1250 element mosaic incorporates an interline transfer architecture. Signal readout for both devices is via a 4-phase buried channel charge-coupled device network and an on-chip amplifier. The focal plane may be operated between 20°K and 100°K; optimum performance is observed between 50°K and 90°K. We present examples of human thermal imaging against ambient backgrounds as well as photoresponse, thermal transfer, and resolution characteristics. Measured results are compared to theoretical predictions of performance and future developments for this class of sensor are projected.
B. Capone, B. Capone, L. Skolnik, L. Skolnik, R. Taylor, R. Taylor, F. Shepherd, F. Shepherd, S. Roosild, S. Roosild, W. Ewing, W. Ewing, W. Kosonocky, W. Kosonocky, E. Kohn, E. Kohn, } "Evaluation Of A Schottky Infrared Charge-Coupled Device (IRCCD) Staring Mosaic Focal Plane," Optical Engineering 18(5), 185535 (1 October 1979). https://doi.org/10.1117/12.7972426 . Submission:


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