1 June 1981 InGaAsP Laser Diodes
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Abstract
The advantages and properties of InGaAsP laser diodes in the 1.0 to 1 .7 um spectral region are discussed. The structure, growth (both vapor and liquid phase epitaxy), and operating principles of these devices are briefly reviewed. State-of-the-art device results from 1.3 and 1 .55 um devices are then presented. The modal, thermal, and reliability properties of these devices, as well as their commercial availability, are also discussed, and possible directions for future applications are considered.
Gregory H. Olsen, "InGaAsP Laser Diodes," Optical Engineering 20(3), 203440 (1 June 1981). https://doi.org/10.1117/12.7972738 . Submission:
JOURNAL ARTICLE
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