1 December 1982 Detection of thickness uniformity of film layers in semiconductor devices by spatially resolved ellipso-interferometry
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Optical Engineering, 21(6), 216074 (1982). doi:10.1117/12.7973036
New spatially resolved ellipso-interferometry has been developed on the basis of the principle that spatially and temporally coherent light reflected from the two surfaces of a thin solid film will interfere to form a two-dimensional fringe pattern which is directly related to the spatial distribution of the film thickness if the optical constants are uniformly distributed. This technique differs from the conventional ellipsometry and interferometry in that the new ellipso-interferometer can be used to map the thickness distribution of a whole thin film without involving the use of any scanning technique, and in that its spatial resolution is high and can reach the diffraction-limited resolution under certain conditions. In this paper the principle and the applications of this technique are described, and some experimental results are presented to demonstrate the use of this technique for checking the thickness uniformity of oxide layers in semiconductor devices. This new technique is nondestructive, and the time required for this kind of measurement is much less than that by any other conventional technique.
Teruhito Mishima, Kwan C. Kao, "Detection of thickness uniformity of film layers in semiconductor devices by spatially resolved ellipso-interferometry," Optical Engineering 21(6), 216074 (1 December 1982). https://doi.org/10.1117/12.7973036


Spatial resolution

Thin films


Fringe analysis


Nondestructive evaluation

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