1 June 1984 Properties of AlxGal-xAs/GaAs Multiple Quantum Well Laser Structures Grown By Molecular Beam Epitaxy
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Abstract
Multiple quantum well AI,Ga1-xAs/GaAs structures grown by molecular beam epitaxy were studied in order to determine the growth conditions that optimize luminescent response. Low temperature photolumines-cence results indicate that a growth temperature of 700°C is optimum. The quality of the interfaces between the AlxGa1-xAs and GaAs layers was assessed by means of modulation doped structures. It was found that the interfacial quality is optimized at a growth temperature of 700°C. Finally, room temperature continuous wave photopumped laser operation at a wavelength of A= 7270 A is demonstrated in these structures.
R. Fischer, J. Klem, H. Morkoc, Y. L. Sun, M. V Klein, "Properties of AlxGal-xAs/GaAs Multiple Quantum Well Laser Structures Grown By Molecular Beam Epitaxy," Optical Engineering 23(3), (1 June 1984). https://doi.org/10.1117/12.7973287 . Submission:
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