1 October 1984 Diode Laser Arrays With High Power In The 4 To 5 µm Infrared Region
Author Affiliations +
Optical Engineering, 23(5), 235685 (1984). doi:10.1117/12.7973355
We have fabricated monolithic four-element diode laser arrays of PbS09Se01, emitting 100 mW of cw power per array end at 4 A in the 4 to 5µm spectral region. Corresponding to an external quantum efficiency of 20%, these arrays demonstrate the feasibility of upscaling output power levels by the parallelization of stripe-geometry diode lasers on a single crystal wafer. Such high power arrays are useful in applications that require high illumination levels in very narrow spectral ranges. By varying the material type and composition, any emitting region between approximately 4 and 8µm can be obtained with this material system.
K. J. Linden, R E. Reeder, "Diode Laser Arrays With High Power In The 4 To 5 µm Infrared Region," Optical Engineering 23(5), 235685 (1 October 1984). https://doi.org/10.1117/12.7973355


Back to Top