Several configurations of charge-coupled device (CCD) imagers formed on gallium arsenide are considered. A process was investigated for the fabrication of overlapping charge transfer electrode structures in CCDs on GaAs with ion-implanted active channels. The electrode metal was aluminum and the interelectrode isolation medium was anodically formed aluminum oxide. The use of aluminum electrodes and ion-implanted active channels makes this fabrication process compatible with that used for fabricating high speed integrated circuits on GaAs. Support circuitry can thus readily be integrated with the CCD imager. A computer model that simulates charge transfer through an implanted channel beneath an array of electrodes with a finite gap between each pair of electrodes is presented. The use of this model in designing the overlapping electrode structure and channel profile is demonstrated. The impetus of the device design is to maximize charge transfer efficiency and minimize channel noise.
P. B. Kosel,
M. R. Wilson,
J. T. Boyd,
L. A. King,
"Configurations For High Speed Gallium Arsenide Charge-Coupled Device Imagers," Optical Engineering 24(1), 241176 (1 February 1985). https://doi.org/10.1117/12.7973446