1 April 1985 Ion Implanted Optical Waveguides In Gallium Arsenide
Author Affiliations +
Integrated optical circuits operating at infrared wavelengths and fabricated monolithically on a GaAs substrate will have a tremendous impact on signal processing systems. These circuits will afford the ultimate merger of VLSI electronics and microwave devices with integrated GaAs optoelectronics. Such GaAs components include planar and channel waveguides, parallel-channel directional couplers, electro-optic modulators and switches, laser diodes, acousto-optic modulators, and detectors. The focus of this paper is the design and fabrication by ion implantation of the necessary fundamental build-ing blocks of optical integrated circuit planar waveguides. Design considerations include the compensation mechanism in doped GaAs substrates and the implantation processing parameters utilized in achieving optimum optical and electrical device characteristics.
M. A. Mentzer, M. A. Mentzer, R. G. Hunsperger, R. G. Hunsperger, S. Sriram, S. Sriram, J. Bartko, J. Bartko, M. S. Wlodawski, M. S. Wlodawski, J. M. Zavada, J. M. Zavada, H. A. Jenkinson, H. A. Jenkinson, } "Ion Implanted Optical Waveguides In Gallium Arsenide," Optical Engineering 24(2), 241222 (1 April 1985). https://doi.org/10.1117/12.7973459 . Submission:


Millimeter wave aquametry
Proceedings of SPIE (August 18 1994)
Traveling-wave photodetectors
Proceedings of SPIE (May 31 1990)
Monolithic OEICs using GaAs VLSI technology
Proceedings of SPIE (April 03 1997)

Back to Top