1 August 1985 Nonlinear Optical Properties Of GaAs/GaAlAs Multiple Quantum Well Material: Phenomena And Applications
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Abstract
Semiconductor microstructures whose dimensions are comparable to atomic dimensions and whose interfaces are atomically smooth exhibit novel optical properties not encountered in the parent compounds. Quantum well structures, which consist of ultrathin semiconductor layers alternately grown one on the other, possess remarkable optical nolinearities and electro-optical properties with potential applications in optoelectronics. In this paper we review our studies of GaAs/AIGaAs quantum well structures (QWS). We briefly discuss the physics of absorption in QWS at room temperature, and we describe the mechanisms of saturation of excitonic absorption and refraction and that of electroabsorption in QWS. Finally, we review the applications of these effects to optical processing and optoelectronic devices.
D. S. Chemla, D. S. Chemla, D. A. B. Miller, D. A. B. Miller, P. W. Smith, P. W. Smith, } "Nonlinear Optical Properties Of GaAs/GaAlAs Multiple Quantum Well Material: Phenomena And Applications," Optical Engineering 24(4), 244556 (1 August 1985). https://doi.org/10.1117/12.7973529 . Submission:
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