Long wavelength infrared light-emitting diodes have been fabricated from the ternary Pb-chalcogenide material Pb1-xSn,Se with composition x = 3.2%. As captured in an f/2 aperture optical system, these devices emitted approximately 25 nW of 11 Am power with a bandwidth of 0.2 um between half-power points. The line center shifted from 11.6 um at 16 K to 10.4 Am at 50 K, in agreement with results previously obtained from laser emission data. Such devices are useful as radiometric calibration sources for low background infrared detection systems.
K. J. Linden,
S. T. Palmacci,
"Ten Micrometer Infrared Light Emitting Diodes For Radiometric Sources," Optical Engineering 24(4), 244719 (1 August 1985). https://doi.org/10.1117/12.7973560